(MENAFNEditorial)
Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are process employed to generate high quality and performance materials. ALD/ CVD high purity precursors are distributed via cylinders and provide control to meet process necessities. ALD or CVD precursor materials are ideal for copper metal and electrode deposition on semiconductor structures using ALD processes. The process is useful to produce thin films in the semiconductor industry. are used for capacitors and gate while metal precursors are used for electrode.
Strong demand for high-k precursors for various applications including LED is expected to drive high-k and ALD/CVD market growth during the forecast period. In addition advanced innovative products in order to meet new integration systems would boost the market growth in the years to come. Continuous technological advancement and rising demand for high-k and ALD/CVD metal precursors in nanotechnology is further predicted to fuel market growth. The report also analyzes several driving and restraining factors and their impact on the market during the forecast period.
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The report provides a compressive view of the high-k and ALD/CVD metal precursors market based on technology and region. The high-k and ALD/CVD metal precursors market can be classified in terms of technology into interconnect capacitor and high-k gates. Capacitor segment accounted for significant share of overall market. High-k gate is another key technology in this market and expected to exhibit considerable growth over the forecast period. Interconnect is a fabrication techniques that uses copper or aluminum for patterning metals.
Geographically the high-k and ALD/CVD metal precursors market has been segmented into North America Europe Asia Pacific Latin America and Middle East & Africa further bifurcation of region on the country level which include U.S. Germany UK France China Japan and India. Asia Pacific has witnessed strong growth of high-k and ALD/CVD metal precursors in past couple of years on account of advanced packaging base. North America is expected to exhibit moderate growth over the forecast period.
The report provides comprehensive view on the high-k and ALD/CVD metal precursors market. To understand the competitive landscape in the market an analysis of Porter’s Five Forces model for the high-k and ALD/CVD metal precursors market has also been included. The study encompasses a market attractiveness analysis wherein application segments are benchmarked based on their market size growth rate and general attractiveness.
Some of the key players operating in the high-k and ALD/CVD metal precursors market are Dow Chemical JSR Corporation AFC Hitech Adeka Corporation Linde Dynamic Network Factory Inc NANMAT Air Products and Chemicals Tri Chemical Laboratories Inc. and Samsung Electronics among others. The detailed description of players includes parameters such as company overview financial overview business and recent developments of the company.
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This report segments the global high-k and ALD/CVD metal precursors market as follows:
High-K and ALD/CVD Metal Precursors Market: Product Segment Analysis
Interconnect
Capacitor
High-K Gates
High-K and ALD/CVD Metal Precursors Market: Regional Segment Analysis
North America
U.S.
Europe
UK
France
Germany
Asia Pacific
China
Japan
India
Latin America
Brazil
Middle East & Africa
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